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CQY37N
Vishay Telefunken
GaAs Infrared Emitting Diode in Miniature (T-3/4) Package
Description
CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics. The diode is case compatible to the BPW17N phototransistor, allowing the user to assemble his own optical interrupters.
Features
D D D D D
Suitable for pulse operation Standard T-3/4 lensed miniature package Angle of half intensity = 12 Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors
94 8639
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFSM PV Tj Tstg Tsd RthJA Value 5 100 2 170 100 -25...+100 245 450 Unit V mA A mW C C C K/W
tp
x 100 ms
t
x3s
Document Number 81002 Rev. 2, 20-May-99
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CQY37N
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Intensity Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise time Fall Time Test Conditions IF = 50 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 50 mA, tp 20 ms IF = 50 mA, tp 20 ms IF = 50 mA
x x x
Symbol VF V(BR) Cj Ie TKfe
Min 5 2.2
Typ 1.3 50 5 10 -0.8 12 950 50 400 450
Max 1.6
fe
IF = 50 mA IF = 50 mA IF = 1.5 A, tp/T = 0.01, tp 10 ms IF = 1.5 A, tp/T = 0.01, tp 10 ms
lp Dl
tr tf
x x
Unit V V pF mW/sr mW %/K deg nm nm ns ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
250 PV - Power Dissipation ( mW ) 200 IF - Forward Current ( mA ) 125 100
150 RthJA 100
75 RthJA 50
50 0 0 20 40 60 80 100
25 0 0 20 40 60 80 100
94 8029 e
Tamb - Ambient Temperature ( C )
94 7916 e
Tamb - Ambient Temperature ( C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81002 Rev. 2, 20-May-99
CQY37N
Vishay Telefunken
104 100.0 IF - Forward Current ( mA ) 103 102 101 100 10-1 0
94 7996 e
Fe - Radiant Power ( mW )
4
13718
10.0
1.0
0.1 1 2 3 1 10 100 1000 VF - Forward Voltage ( V ) IF - Forward Current ( mA )
Figure 3. Forward Current vs. Forward Voltage
1.2 V Frel - Relative Forward Voltage 1.1 I e rel ; Fe rel IF = 10 mA 1.0 0.9
Figure 6. Radiant Power vs. Forward Current
1.6
1.2 IF = 20 mA 0.8
0.4 0.8 0.7 0 20 40 60 80 100
94 7993 e
0 -10 0 10
50
100
140
94 7990 e
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 4. Relative Forward Voltage vs. Ambient Temperature
100 I e - Radiant Intensity ( mW/sr )
Figure 7. Rel. Radiant Intensity\Power vs. Ambient Temperature
1.25
Fe rel - Relative Radiant Power
1.0
10
0.75 0.5
1
0.25 IF = 100 mA 0 900
0.1 100
94 7920 e
101 102 103 IF - Forward Current ( mA )
104
94 7994 e
l - Wavelength ( nm )
950
1000
Figure 5. Radiant Intensity vs. Forward Current
Figure 8. Relative Radiant Power vs. Wavelength
Document Number 81002 Rev. 2, 20-May-99
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CQY37N
Vishay Telefunken
0 I e rel - Relative Radiant Intensity 10 20 30
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
94 7922 e
Figure 9. Relative Radiant Intensity vs. Angular Displacement
Dimensions in mm
95 11262
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Document Number 81002 Rev. 2, 20-May-99
CQY37N
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81002 Rev. 2, 20-May-99
www.vishay.de * FaxBack +1-408-970-5600 5 (5)

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